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| PST1600A ... PST1600M PST1600A ... PST1600M Silicon Rectifiers - Half Bridge Silizium-Gleichrichter - Halbbrucke Version 2007-07-06 10 4 15.7 0.2 Nominal current Nennstrom 4 16 A 50...1000 V TO-220AB 1.8 g 3.8 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehause 123 13.2 3.4 3 1.5 0.9 2.54 123 Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Mae [mm] Maximum ratings and Characteristics Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) 50 100 200 400 600 800 1000 Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 1) 50 100 200 400 600 800 1000 TC = 100C TC = 100C f > 15 Hz TA = 25C TA = 25C Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25C IF = 5 A IF = 8 A < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 8 A 1) 16 A 2) 30 A 3) 135/150 A 1) 90 A2s 1) -50...+150C -50...+175C < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 IFAV IFAV IFRM IFSM i2t PST1600A PST1600B PST1600D PST1600G PST1600J PST1600K PST1600M Max. average forward current, R-load Dauergrenzstrom mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur TS Tj 1 2 3 Per diode - Pro Diode Output current when operating two devices in a full bridge configuration Ausgangstrom bei Betrieb zweier Bauteile als Vollbrucke Max. temperature of the case TC = 100C - Max. Temperatur des Gehauses TC = 100C http://www.diotec.com/ (c) Diotec Semiconductor AG 1 PST1600A ... PST1600M Characteristics Leakage current Sperrstrom Thermal resistance junction to case Warmewiderstand Sperrschicht - Gehause Tj = 25C VR = VRRM IR RthC Kennwerte < 10 A < 2.5 K/W 1) 120 [%] 100 102 [A] 10 80 1 Tj = 125C Tj = 25C 60 40 10 20 IFAV 0 0 TC 50 100 150 [C] IF 10-2 0.4 200a-(5a-0.95v) -1 VF 0.8 1.0 1.2 1.4 [V] 1.8 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehausetemperatur Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 Per diode - Pro Diode http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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